Items where Author is "Reddy, V. Rajagopal"

Kumar, S. and Mariswamy, V. Kumar and Kumar, A. and Kandasami, A. and Nimmala, A. and Rao, S. V. S. Nageswara and Reddy, V. Rajagopal and Sannathammegowda, K. (2020) Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes. Semiconductors, 54 (12). pp. 1641-1649. ISSN 1090-6479

Reddy, V. Rajagopal and Rao, P. Koteswara (2008) Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN. Microelectronic Engineering, 85 (2). 470 - 476. ISSN 1873-5568

Reddy, V. Rajagopal and Rao, P. Koteswara and Ramesh, C. K. (2007) Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts. Materials Science and Engineering: B, 137 (1). 200 - 204. ISSN 0921-5107

Reddy, V. Rajagopal and Choi, Chel-Jong (2007) Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN. Physica Status Solidi (a), 204 (10). pp. 3392-3397. ISSN 1862-6319

Ramesh, C. K. and Reddy, V. Rajagopal and Rao, K. S. R. Koteswara (2006) Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. Journal of Materials Science: Materials in Electronics, 17 (12). pp. 999-1004. ISSN 1573-482X

Reddy, V. Rajagopal and Reddy, N. Ramesha and Choi, Chel-Jong (2006) The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN. Semiconductor Science and Technology, 21 (12). pp. 1753-1757. ISSN 1361-6641

Reddy, N. Ramesha and Reddy, V. Rajagopal and Choi, Chel-Jong (2006) Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN. Microelectronic Engineering, 83 (10). 1981 - 1985. ISSN 1873-5568

Bhuvaneswari, H. B. and Reddy, V. Rajagopal and Rao, G. Mohan (2006) Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices. Journal of Materials Science: Materials in Electronics, 17 (5). pp. 335-339. ISSN 1573-482X

Reddy, V. Rajagopal and Ramesh, C. K. and Choi, Chel-Jong (2006) Structural and electrical properties of Mo/n-GaN schottky diodes. Physica status Solidi (a), 203 (3). pp. 622-627. ISSN 1862-6319

Reddy, V. Rajagopal and Reddy, N. Ramesha and Choi, Chel-Jong (2005) Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN. Solid-State Electronics, 49 (7). 1213 - 1216. ISSN 0038-1101

Reddy, V. Rajagopal and Reddy, N. Ramesha and Choi, Chel-Jong (2005) Electrical and structural properties of low-resistance PtAgAu ohmic contacts to p-type GaN. Solid-State Electronics, 49 (7). 1213 - 1216. ISSN 0038-1101

Reddy, V. Rajagopal (2005) Study of the electrical, structural and surface morphological characteristics of Pt Re Au ohmic contacts on p-type GaN. Materials Chemistry and Physics, 93 (2). 286 - 290. ISSN 0254-0584

Reddy, V. Rajagopal (2005) Study of the electrical, structural and surface morphological characteristics of Pt/Re/Au ohmic contacts on p-type GaN. Materials Chemistry and Physics, 93 (2). 286 - 290. ISSN 0254-0584

Reddy, V. Rajagopal and Kim, Sang-Ho and Song, June O and Seong, Tae-Yeon (2003) Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN. Semiconductor Science and Technology, 18 (6). pp. 541-544. ISSN 1361-6641