Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

Reddy, V. Rajagopal and Rao, P. Koteswara and Ramesh, C. K. (2007) Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts. Materials Science and Engineering: B, 137 (1). 200 - 204. ISSN 0921-5107

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Official URL: https://doi.org/10.1016/j.mseb.2006.11.018

Abstract

Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (nd=4.07×1017cm−3) have been investigated using current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75eV (I–V) and 0.93eV (C–V), respectively. It is noted that the barrier height increased when the contact was annealed at 300°C and slightly decreased upon annealing at temperatures of 400°C and 500°C. The extracted Schottky barrier heights are 0.99eV (I–V), 1.34eV (C–V) for 300°C, 0.88eV (I–V), 1.20eV (C–V) for 400°C and 0.72eV (I–V), 1.08eV (C–V) for 500°C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures.

Item Type: Article
Uncontrolled Keywords: Schottky barrier height, – and – techniques, Auger electron microscopy, X-ray diffraction, n-GaN
Subjects: D Physical Science > Electronic
Divisions: PG Centre Hassan > Electronics
Depositing User: MUL SWAPNA user
Date Deposited: 20 Sep 2019 05:23
Last Modified: 20 Sep 2019 05:23
URI: http://eprints.uni-mysore.ac.in/id/eprint/8287

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