Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN

Reddy, V. Rajagopal and Kim, Sang-Ho and Song, June O and Seong, Tae-Yeon (2003) Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN. Semiconductor Science and Technology, 18 (6). pp. 541-544. ISSN 1361-6641

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Official URL: https://iopscience.iop.org/article/10.1088/0268-12...


We have investigated a low-resistance thermally stable Pd/Re ohmic contact on moderately doped p-GaN:Mg (1.1 × 1017 cm−3). It is shown that the I–V characteristic of the as-deposited sample is improved upon annealing at 550 °C for 1 min under N2 ambient. However, annealing the sample at 650 °C results in the degradation of the I–V behaviour. Specific contact resistance as low as 8.7 × 10−4 Ω cm2 is obtained from the Pd(20 nm)/Re(25 nm) contact annealed at 550 °C. It is also shown that the contact exhibits thermal stability during annealing at 550 °C. Auger electron microscopy and glancing angle x-ray diffraction studies are carried out to characterize interfacial reactions between the Pd/Re contacts and the GaN.

Item Type: Article
Subjects: D Physical Science > Electronic
Divisions: Department of > Electronics
Depositing User: LA manjunath user
Date Deposited: 09 Sep 2019 11:47
Last Modified: 09 Sep 2019 11:47
URI: http://eprints.uni-mysore.ac.in/id/eprint/7888

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