Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN

Reddy, V. Rajagopal and Reddy, N. Ramesha and Choi, Chel-Jong (2005) Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN. Solid-State Electronics, 49 (7). 1213 - 1216. ISSN 0038-1101

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Official URL: https://doi.org/10.1016/j.sse.2005.05.005

Abstract

A Pt (20nm)/Ag (50nm)/Au (30nm) metallization scheme has been investigated for producing low-resistance ohmic contacts to moderately doped p-type GaN (1.3×1017cm−3). It is shown that the as-deposited contacts exhibit a linear I–V characteristic with a specific contact resistance of 4.43×10−3Ωcm2. The Pt/Ag/Au contact produced a specific contact resistance as low as 1.70×10−4Ωcm2 after annealing at 800°C for 1min in a N2 atmosphere. It is further shown that the surface morphology of the contact annealed at 800°C (RMS roughness of 19.9nm) became somewhat degraded compared with that of the as-deposited one (RMS roughness of 3.3nm). Based on the Auger electron microscopy and X-ray diffraction results, possible explanations for the improvement of the ohmic behavior are described.

Item Type: Article
Uncontrolled Keywords: Electrical and structural properties, Pt/Ag/Au ohmic contacts, Spectroscopy, X-ray diffraction, p-GaN
Subjects: D Physical Science > Electronic
Divisions: PG Centre Hassan > Electronics
Depositing User: manjula User
Date Deposited: 18 Sep 2019 05:38
Last Modified: 18 Sep 2019 05:44
URI: http://eprints.uni-mysore.ac.in/id/eprint/8225

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