Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN

Ramesh, C. K. and Reddy, V. Rajagopal and Rao, K. S. R. Koteswara (2006) Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. Journal of Materials Science: Materials in Electronics, 17 (12). pp. 999-1004. ISSN 1573-482X

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Official URL: https://doi.org/10.1007/s10854-006-9001-y

Abstract

The electrical properties of ruthenium (Ru) and ruthenium/gold (Ru/Au) Schottky contacts on n-type GaN are investigated as a function of annealing temperature by current--voltage (I--V) and capacitance--voltage (C--V) techniques. The Schottky barrier height of as-deposited Ru/n-GaN is found to be 0.88 eV (I--V) and 1.10 eV (C--V) respectively. However, after annealing at 500°C for 1 min in the nitrogen ambient, the decrease in barrier height is quite considerable and found to be 0.80 eV (I--V) and 0.86 eV (C--V). In the case of Ru/Au Schottky diode the measured barrier height is 0.75 eV (I--V) and 0.93 eV (C--V). In contrast to the Ru contacts, it is interesting to note that the barrier height of Ru/Au depends on the annealing temperature. Annealing at 300°C improves the barrier height and the corresponding values are 0.99 and 1.34 eV. Further increase in annealing temperature decreases the barrier height and the respective values are 0.72 and 1.08 eV at 500°C. From the above observations, it is clear that the electrical properties of annealed Ru/Au contacts are improved compared to the as-deposited films. However, Ru Schottky contacts exhibit a kind of thermal stability during annealing.

Item Type: Article
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: lpa manjunath user
Date Deposited: 12 Aug 2019 05:42
Last Modified: 12 Aug 2019 05:42
URI: http://eprints.uni-mysore.ac.in/id/eprint/6253

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