Structural and electrical properties of Mo/n-GaN schottky diodes

Reddy, V. Rajagopal and Ramesh, C. K. and Choi, Chel-Jong (2006) Structural and electrical properties of Mo/n-GaN schottky diodes. Physica status Solidi (a), 203 (3). pp. 622-627. ISSN 1862-6319

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Official URL: https://doi.org/10.1002/pssa.200521313

Abstract

Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n-type GaN (4.07 × 1018 cm–3) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as-deposited sample was 0.81 eV (I–V) and 1.02 eV (C–V), respectively. It is shown that when the sample is annealed at 400 °C the Schottky barrier height slightly decreases to 0.74 eV (I–V) and 0.92 eV (C–V), respectively. However, the barrier height degraded to 0.56 and 0.73 eV when the sample was annealed at 600 °C for 1 min in nitrogen ambient. Based on the Auger electron microscopy and X-ray diffraction results, the formation of nitride phases at the Mo/n-GaN interface could be the reason for degradation of Schottky barrier height upon annealing at 600 °C. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Item Type: Article
Uncontrolled Keywords: 68.35.Fx, 73.30.+y, 85.30.Hi, 85.30.Kk
Subjects: D Physical Science > Electronic
Divisions: Department of > Electronics
Depositing User: lpa manjunath user
Date Deposited: 27 Aug 2019 11:19
Last Modified: 27 Aug 2019 11:19
URI: http://eprints.uni-mysore.ac.in/id/eprint/7168

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