Items where Author is "Pushpa, N."

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Article

Bharathi, M. N. and Pushpa, N. and Vinayakprasanna, N. H. and Gnana Prakash, A. P. (2016) 80 MeV C6+ ion irradiation effects on the DC electrical characteristics of silicon NPN power transistors. AIP Conference Proceedings, 1731 (1). ISSN 0094-243X

Hemaraju, B. C. and Ahlam, M. A. and Pushpa, N. and Mahadevan, K. M. and Gnana Prakash, A. P. (2016) Synthesis, growth and characterization of a new organic nonlinear optical crystal: 3-[(1-(2-phenylhydrazinylidene)ethyl]-2 H-chromen-2-one. Journal of Optics, 45 (1). pp. 73-80. ISSN 0974-6900

Arshiya Anjum, and Vinayakprasanna, N. H. and Pradeep, T. M. and Pushpa, N. and Krishna, J. B. M. and Gnana Prakash, A. P. (2016) A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. pp. 265-271. ISSN 0168-583X

Arshiya Anjum, and Vinayakprasanna, N. H. and Pradeep, T. M. and Pushpa, N. and Krishna, J. B. M. and Gnana Prakash, A. P. (2016) A comparison of 4 MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. 18th International Conference on Radiation Effects in Insulators (REI-18) Dates: 26th to 31st October, 2015, 379. pp. 265-271. ISSN 0168-583X

Bharathi, M. N. and Pushpa, N. and Vinayakprasanna, N. H. and Gnana Prakash, A. P. (2016) A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 822 (21). pp. 34-42. ISSN 0168-9002

Hemaraju, B. C. and Ahlam, M. A. and Pushpa, N. and Mahadevan, K. M. and Gnana Prakash, A. P. (2015) Synthesis, growth and characterization of a new promising organic nonlinear optical crystal: 4-Nitrophenyl hydrazone. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 151. pp. 854-860. ISSN 1386-1425

Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796. ISSN 0973-1458

Vinayakprasanna, N. H. and Praveen, C. K. and Pushpa, N. and Tripathi, Ambuj and Cressler, J. D. and Gnana Prakash, A. P. (2015) 80 MeV carbon ion irradiation effects on advanced 200 GHz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126. ISSN 0976-397X

Pushpa, N. and Gnana Prakash, A. P. (2015) Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors. Indian Journal of Physics, 89 (9). pp. 943-950. ISSN 0974-9845

Bharathi, M. N. and Praveen, K. C. and Pushpa, N. and Gnana Prakash, A. P. (2014) High total dose proton irradiation effects on silicon NPN rf power transistors. AIP Conference Proceedings, 1591 (1). pp. 1446-1448.

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, Shammi and Tripathi, Ambuj and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624.

Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Gupta, S. K. and Revannasiddaiah, D. (2013) An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon {NPN} rf power transistors. Current Applied Physics , 13 (1). 66 - 75.

Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, Ambuj and Gnana, P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. AIP Conference Proceedings, 1512 (Solid ). pp. 1030-1031. ISSN 0094-243X

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Prakash, A. P. Gnana (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 43-46.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Naik, P. S. and Cressler, J. D. and Gupta, S. K. and Revannasiddaiah, D. (2012) Reliability studies on NPN RF power transistors under swift heavy ion irradiation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 36-39.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Naik, P. S. and Tripathi, Ambuj and Gupta, S. K. and Revannasiddaiah, D. (2012) The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 40-42.

Praveen, K.C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. 20th International Conference on Ion Beam Analysis, 273. pp. 43-46. ISSN 0168-583X

Prakash, A. P. G. and Pushpa, N. and Praveen, K. C. and Naik, P. S. and Revannasiddaiah, D. (2012) Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices. AIP Conference Proceedings, 1447 (Pt. 1,). pp. 489-490. ISSN 0094-243X

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and Naik, P. S. and Cressler, J. D. and Prakash, A. P. G. (2012) A comparison of 100 MeV oxygen ion and C0-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12). Proceedings of SPIE, 8549 (16th I). 85490J/1-85490J/2. ISSN 0277-786X

Pushpa, N. and Praveen, K. C. and Prakash, A. P. G. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs. AIP Conference Proceedings, 1447 (Pt. 2,). pp. 1043-1044. ISSN 0094-243X

Pushpa, N. and Praveen, K. C. and Prakash, A. P. G. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13). Proceedings of SPIE, 8549 (16th I). 85490K/1-85490K/3. ISSN 0277-786X

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and John Cressler, D. and Gnana Prakash, A. P. (2011) 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 166 (8-9, S). pp. 710-717.

Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2011) Analysis of high energy ion, proton and Co-60 gamma radiation induced damage in advanced 200 GHz SiGe HBTs. pp. 348-357.

Pushpa, N. and Gnana Prakash, A. P. and Gupta, S. K. and Revannasiddaiah, D. (2011) Swift Heavy Ion Irradiation Effects on NPN rf Power Transistors. AIP Conference Proceedings, 1349. pp. 1007-1008. ISSN 0094-243X

Praveen, K. C. and Pushpa, N. and Prabakara, Y. P. and Govindaraj, G. and Cressler, J. D. and Prakash, A. P. Gnana (2010) Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments. SOLID-STATE ELECTRONICS, 54 (12). pp. 1554-1560.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Rao, Y. P. Prabhakara and Tripathi, Ambuj and Revannasiddaiah, D. (2010) An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 620 (2-3). pp. 450-455.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Rao, Y. P. Prabhakara and Tripathi, Ambuj and Govindaraj, G. and Revannasiddaiah, D. (2010) A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 613 (2). pp. 280-289.

Pushpa, N. and Prakash, A. P. Gnana and Praveen, K. C. and Cressler, J. D. and Revannasiddaiah, D. (2009) An investigation of electron and oxygen ion damage in Si npn RF power transistors. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 164 (10). pp. 592-603.

Book Section

Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Gnana Prakash, A. P. (2014) A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. Environmental Science and Engineering . Springer International Publishing, pp. 113-116. ISBN 978-3-319-03001-2

Conference or Workshop Item

Bharathi, M. N. and Pushpa, N. and Vinayakprasanna, N. H. and Gnana Prakash, A. P. (2015) 80 MeV C6+ ion irradiation effects on the DC electrical characteristics of silicon NPN power transistors. In: DAE Solid State Physis Symposium , 21–25 December 2015, Uttar Pradesh, India.

Gnana Prakash, A. P. and Praveen, K. C. and Pushpa, N. and Cressler, John D. (2015) The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator. In: AIP Conf. Proc. 1661, 4–6 November 2014, Shimla, India.

This list was generated on Thu Nov 23 12:51:30 2017 IST.