A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors

Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Prakash, A. P. G. (2015) A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. INDIAN JOURNAL OF PHYSICS, 89 (8). pp. 789-796. ISSN 0974-9845

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Official URL: http://doi.org/10.1007/s12648-015-0654-3

Abstract

The third-generation (200 GHz) silicon-germanium heterojunction bipolar transistors were irradiated with 100 MeV oxygen O7+] ions in the dose range from 1 to 100 Mrad. The different electrical characteristics like forward-mode and inverse-mode Gummel characteristics, the normalized base current, excess base current, the current gain, damage constant, neutral base recombination, avalanche multiplication and the output characteristics were measured before and after irradiation. The ion irradiation results were compared with Co-60 gamma irradiation results to understand the linear energy transfer effects on the electrical characteristics on silicon-germanium heterojunction bipolar transistors. The stopping range of ions in matter simulation study was conducted to understand the energy loss of 100 MeV O7+ ions in silicon-germanium heterojunction bipolar transistor structure.

Item Type: Article
Uncontrolled Keywords: 200 GHz silicon-germanium heterojunction bipolar transistor; 100 MeV oxygen ion irradiation; Stopping and range of ions in matter simulations; Excess base current
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: Shrirekha N
Date Deposited: 01 Jun 2019 08:00
Last Modified: 01 Jun 2019 08:00
URI: http://eprints.uni-mysore.ac.in/id/eprint/2042

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