Swift heavy ion irradiation and annealing studies on the I-V characteristics of N-channel depletion Metal-oxide-semiconductor field-effect transistors

Pushpa, N. and Prakash, A. P. G. (2015) Swift heavy ion irradiation and annealing studies on the I-V characteristics of N-channel depletion Metal-oxide-semiconductor field-effect transistors. INDIAN JOURNAL OF PHYSICS, 89 (9). pp. 943-950. ISSN 0974-9845

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Official URL: http://doi.org/10.1007/s12648-015-0659-y

Abstract

N-channel depletion MOSFETs were irradiated with different swift heavy ions viz., 175 MeV Ni 13? ions, 140 MeV Si10+ ions, 100 MeV F8+ ions, 95 MeV O7+ ions and 48 MeV Li3+ ions in the same dose range of 100 krad-100 Mrad. The different electrical characteristics of MOSFETs were studied before and after irradiation and after annealing. The degradation and recovery mechanisms were studied systematically. It was found that around 80 % degradation in transconductance and mobility and almost 100 % recoveries in the electrical characteristics of irradiated MOSFETs after annealing.

Item Type: Article
Uncontrolled Keywords: Interface trapped charge; Oxide trapped charge; Threshold voltage; Transconductance; Mobility degradation
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: Shrirekha N
Date Deposited: 30 May 2019 11:43
Last Modified: 30 May 2019 11:43
URI: http://eprints.uni-mysore.ac.in/id/eprint/712

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