High total dose proton irradiation effects on silicon NPN rf power transistors

Bharathi, M. N. and Praveen, K. C. and Pushpa, N. and Gnana Prakash, A. P. (2014) High total dose proton irradiation effects on silicon NPN rf power transistors. In: AIP Conference Proceedings.

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Official URL: https://doi.org/10.1063/1.4872991


The effects of 3 MeV proton irradiation on the I-V characteristics of NPN rf power transistors were studied in the dose range of 100 Krad to 100 Mrad. The different electrical characteristics like Gummel, current gain and output characteristics were systematically studied before and after irradiation. The recovery in the I-V characteristics of irradiated NPN BJTs were studied by isochronal and isothermal annealing methods.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Isochronal annealing, Bipolar transistors, Electrical characteristic, Output characteristics, Transistors, Irradiation effect, Proton irradiation, BJT, DC current gain, Power electronics, RF power transistors, Solid state physics, Amplification, Isothermal annealing, Trap center
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: Arshiya Kousar Library Assistant
Date Deposited: 15 Jun 2019 05:51
Last Modified: 03 Jul 2023 05:49
URI: http://eprints.uni-mysore.ac.in/id/eprint/3076

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