A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs

Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, A. and Gnana Prakash, A. P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. In: AIP Conference Proceedings.

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Official URL: http://doi.org/10.1063/1.4791395

Abstract

The third generation Silicon-Germanium Heterojunction Bipolar Transistors (200 GHz SiGe HBTs) were irradiated with 50 MeV Lithium and 75 MeV Boron ions in the dose ranging from 1 Mrad to 100 Mrad. The different electrical characteristics like forward-mode Gummel characteristics, inverse-mode Gummel characteristics, excess base current and current gain were studied before and after ion irradiation. The damage constants for 50 MeV Li3+ and 100 MeV B5+ ion irradiated SiGe HBTs were calculated using Messenger-Spratt equation.

Item Type: Conference or Workshop Item (Paper)
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: Arshiya Kousar
Date Deposited: 17 Oct 2019 10:01
Last Modified: 17 Oct 2019 10:01
URI: http://eprints.uni-mysore.ac.in/id/eprint/9187

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