 | Up a level |
Reddy, V. Rajagopal and Rao, P. Koteswara and Ramesh, C. K. (2007) Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts. Materials Science and Engineering: B, 137 (1). 200 - 204. ISSN 0921-5107
Ramesh, C. K. and Reddy, V. Rajagopal and Rao, K. S. R. Koteswara (2006) Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. Journal of Materials Science: Materials in Electronics, 17 (12). pp. 999-1004. ISSN 1573-482X
Reddy, V. Rajagopal and Ramesh, C. K. and Choi, Chel-Jong (2006) Structural and electrical properties of Mo/n-GaN schottky diodes. Physica status Solidi (a), 203 (3). pp. 622-627. ISSN 1862-6319
Ramesh, C. K. and Reddy, V. R. and Choi, CJ (2004) Electrical characteristics of molybdenum Schottky contacts on n-type GaN. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 112 (1). pp. 30-33. ISSN 0921-5107
Reddy, V. R. and Ramesh, C. K. and Reddy, P. N. (2004) Interfacial reaction and surface morphology of Pd/Re contact schemes to p-type GaN. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 42 (5). pp. 361-365. ISSN 0975-1041
Reddy, V. R. and Ramesh, C. K. (2004) Low-resistance ohmic contacts to N-type GaN using Ti/Al/Re/Au multilayer scheme. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6 (1). pp. 177-182. ISSN 1454-4164
