Items where Author is "Ramesh, C. K."

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Number of items: 8.

Article

Ramesh, C. K. and Subramnaya, G. (2009) Selection of Promising Bivoltine Hybrids by MST Analysis. Asian journal of experimental science, 23 (1). pp. 115-122.

Rajagopal Reddy, V. and Koteswara Rao, P. and Ramesh, C. K. (2007) Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 137 (1-3). pp. 200-204.

Ramesh, C. K. and Rajagopal Reddy, V. and Koteswara Rao, K. S. R. (2006) Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 17 (12). pp. 999-1004.

Rajagopal Reddy, V. and Ramesh, C. K. and Chel-Jong Choi, (2006) Structural and electrical properties of Mo/n-GaN Schottky diodes. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203 (3). pp. 622-627.

Ramesh, C. K. and Rajagopal Reddy, V. and Chel-Jong Choi, (2004) Electrical characteristics of molybdenum Schottky contacts on n-type GaN. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 112 (1). pp. 30-33.

Rajagopal Reddy, V. and Ramesh, C. K. and Narasimha Reddy, P. (2004) Interfacial reaction and surface morphology of Pd/Re contact schemes to p-type GaN. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 42 (5). pp. 361-365.

Rajagopal Reddy, V. and Ramesh, C. K. (2004) Low-resistance ohmic contacts to N-type GaN using Ti/Al/Re/Au multilayer scheme. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6 (1). pp. 177-182.

Rajagopal Reddy, V. and Ramesh, C. K. and Narasimha Reddy, P. (2004) Interfacial reaction and surface morphology of Pd/Re contact schemes to p-type GaN. Indian Journal of Pure and Applied Physics, 42. pp. 361-365. ISSN 0019-5596

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