Low-resistance ohmic contacts to N-type GaN using Ti/Al/Re/Au multilayer scheme

Reddy, V. R. and Ramesh, C. K. (2004) Low-resistance ohmic contacts to N-type GaN using Ti/Al/Re/Au multilayer scheme. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6 (1). pp. 177-182. ISSN 1454-4164

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Abstract

A Ti/Al/Re/Au multilayer scheme has been developed for obtaining very low ohmic contact to moderately doped n-type GaN (4.07 x 10(18) cm(-3)). It is shown that the I-V characteristics of the as-deposited contacts improved upon annealing temperatures in the range of 550-750degreesC. Specific contact resistance as low as 1.3 x 10(-6) Omegacm(2) is obtained from the Ti (150Angstrom)/Al (600Angstrom)/Re (200Angstrom)/Au (500Angstrom) contact annealed at 750degreesC for 1 min in a N-2 ambient. It is also shown that annealing results in a large reduction (by similar to150 meV) in the Schottky barrier heights of contact, compared to the as-deposited one. Based on the XPS and AES results, possible explanations for the annealing temperature dependence of the specific contact resistance of the Ti/Al/Re/Au contacts are described and discussed.

Item Type: Article
Uncontrolled Keywords: ohmic contacts; n-type GaN; Schottky barrier height; X-ray photoclectron spectroscopy; auger electron microscopy
Subjects: D Physical Science > Electronic
Divisions: PG Centre Hassan > Electronics
Depositing User: lpa venkatesh user
Date Deposited: 26 Aug 2019 09:51
Last Modified: 26 Aug 2019 09:51
URI: http://eprints.uni-mysore.ac.in/id/eprint/6610

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