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Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Cressler, J. D. and Gnana Prakash, A. P. (2018) A Comparison of electron, proton and gamma irradiation effects on the I-V characteristics of 200 GHz SiGe HBTs. IEEE Transactions on Device and Materials Reliability, 18 (4). pp. 592-598. ISSN 1530-4388
Bharathi, M. N. and Hegde, Vinayakprasanna N. and Anjum, Arshiya and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors. Radiation Effects and Defects in Solids, 172 (3-4). pp. 235-249. ISSN 1029-4953
Vinayakprasanna, N. H. and Praveen, K. C. and Cressler, J. D. and Gnana Prakash, A. P. (2017) Recovery of electrical characteristics of 80 MeV carbon ion irradiated SiGe HBTs by mixed mode electrical stress. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616
Pradeep, T. M. and Vinayakprasanna, N. H. and Hemaraju, B. C. and Praveen, K. C. and Anjum, Arshiya and Pushpa, N. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Tripathi, A. and Cressler, J. D. and Gnana Prakash, A. P. (2015) 80 MeV carbon ion irradiation effects on advanced 200 ghz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126.
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796. ISSN 0974-9845
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100â MeV oxygen ion and 60co gamma irradiation effects on advanced 200â GHz sige heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796.
Gnana Prakash, A. P. and Praveen, K. C. and Pushpa, N. and Cressler John, D. (2015) The reliability studies of Nano-Engineered SiGe HBTs using pelletron accelerator. AIP Conference Proceedings, 1661 (1).
Vermaand, S. and Praveen, K. C. and Bobby, A. and Kanjilal, D. (2014) Recovery of electrical characteristics of Au/n-Si schottky junction under ⁶⁰\hboxCo gamma irradiation. IEEE Transactions on Device and Materials Reliability, 14 (2). pp. 721-725.
Bharathi, M. N. and Praveen, K. C. and Pushpa, N. and Gnana Prakash, A. P. (2014) High total dose proton irradiation effects on silicon NPN rf power transistors. In: AIP Conference Proceedings.
Rao, Y. P. P. and Praveen, K. C. and Rejeena Rani, Y. and Gnana Prakash, A. P. (2014) Novel methods to reduce leakage current in Si PIN photodiodes designed and fabricated with different dielectrics. Indian Journal of Pure and Applied Physics, 52 (9). pp. 637-644.
Prabhakara Rao, Y. P. and Praveen, K. C. and Rejeena Rani, Y. and Tripathi, A. and Gnana Prakash, A. P. (2013) 75 MeV boron ion irradiation studies on Si PIN photodiodes. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 316. pp. 205-209. ISSN 0168-583X
Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, S. and Tripathi, A. and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624. ISSN 1042-0150
Verma, S. and Praveen, K. C. and Kumar, T. and Kanjilal, D. (2013) In situ investigation of current transport across Pt/n-Si (100) Schottky junction during 100 MeV Ni+7 ion irradiation. IEEE Transactions on Device and Materials Reliability, 13 (1). pp. 98-102.
Sana, P. and Verma, S. and Praveen, K. C. and Malik, M. M. (2013) In-situ I-V measurements of ZnS:TiO2/p-Si quantum dot heterojunction photodiode under 120 MeV Au9+ ion irradiation. IEEE Journal of Quantum Electronics, 49 (9). pp. 770-776.
Prabhakara Rao, Y. P. and Praveen, K. C. and Rani, Y. R. and Gnana Prakash, A. P. (2013) Reliability studies on Si PIN photodiodes under Co-60 gamma radiation. In: AIP Conference Proceedings.
Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Gupta, S. K. and Revannasiddaiah, D. (2013) An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors. Current Applied Physics, 13 (1). pp. 66-75.
Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, A. and Gnana Prakash, A. P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. In: AIP Conference Proceedings.
Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, John D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50GHz SiGe HBTs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 43 - 46. ISSN 0168-583X
Gnana Prakash, A. P. and Pushpa, N. and Praveen, K. C. and Naik, P. S. and Revannasiddaiah, D. (2012) Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices. AIP Conference Proceedings, 1447 (1). pp. 489-490. ISSN 1551-7616
Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Cressler, John D. and Gupta, S. K. and Revannasiddaiah, D. (2012) Reliability studies on NPN RF power transistors under swift heavy ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 36 - 39. ISSN 0168-583X
Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Tripathi, Ambuj and Gupta, S. K. and Revannasiddaiah, D. (2012) The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 40 - 42. ISSN 0168-583X
Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs. AIP Conference Proceedings, 1447 (1). pp. 1043-1044. ISSN 1551-7616
Praveen, K. C. and Pushpa, N. and Tripathi, A. and Revannasiddaiah, D. and Cressler, J. D. and Gnana Prakash, A. P. (2011) 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs. Radiation Effects and Defects in Solids, 166 (8-9, S). pp. 710-717. ISSN 1042-0150
Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101
Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101
Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101
Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Rao, Y. P. Prabhakara and Tripati, Ambuj and Govindaraj, G. and Revannasiddaiah, D. (2010) A comparison of 48MeV Li3+ ion, 100MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 613 (2). 280 - 289. ISSN 0168-9002
Pushpa, N. and Gnana Prakash, A. P. and Praveen, K. C. and Cressler, John D. and Revannasiddaiah, D. (2009) An investigation of electron and oxygen ion damage in Si npn RF power transistors. Radiation effects and defects in solids, 164 (10). pp. 592-603. ISSN 1042-0150
Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Gnana Prakash, A. P. A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. UNSPECIFIED. ISBN 9783319030029
