Items where Author is "Cressler, J. D."

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Article

Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796. ISSN 0973-1458

Vinayakprasanna, N. H. and Praveen, C. K. and Pushpa, N. and Tripathi, Ambuj and Cressler, J. D. and Gnana Prakash, A. P. (2015) 80 MeV carbon ion irradiation effects on advanced 200 GHz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126. ISSN 0976-397X

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, Shammi and Tripathi, Ambuj and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624.

Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, Ambuj and Gnana, P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. AIP Conference Proceedings, 1512 (Solid ). pp. 1030-1031. ISSN 0094-243X

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Prakash, A. P. Gnana (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 43-46.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Naik, P. S. and Cressler, J. D. and Gupta, S. K. and Revannasiddaiah, D. (2012) Reliability studies on NPN RF power transistors under swift heavy ion irradiation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 36-39.

Praveen, K.C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. 20th International Conference on Ion Beam Analysis, 273. pp. 43-46. ISSN 0168-583X

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and Naik, P. S. and Cressler, J. D. and Prakash, A. P. G. (2012) A comparison of 100 MeV oxygen ion and C0-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12). Proceedings of SPIE, 8549 (16th I). 85490J/1-85490J/2. ISSN 0277-786X

Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2011) Analysis of high energy ion, proton and Co-60 gamma radiation induced damage in advanced 200 GHz SiGe HBTs. pp. 348-357.

Gnana Prakash, A. P. and Cressler, J. D. (2011) The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 166 (8-9, S). pp. 703-709.

Praveen, K. C. and Pushpa, N. and Prabakara, Y. P. and Govindaraj, G. and Cressler, J. D. and Prakash, A. P. Gnana (2010) Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments. SOLID-STATE ELECTRONICS, 54 (12). pp. 1554-1560.

Pushpa, N. and Prakash, A. P. Gnana and Praveen, K. C. and Cressler, J. D. and Revannasiddaiah, D. (2009) An investigation of electron and oxygen ion damage in Si npn RF power transistors. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 164 (10). pp. 592-603.

Book Section

Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Gnana Prakash, A. P. (2014) A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. Environmental Science and Engineering . Springer International Publishing, pp. 113-116. ISBN 978-3-319-03001-2

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