Items where Author is "Cressler, J. D."

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Number of items: 9.

Article

Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Cressler, J. D. and Gnana Prakash, A. P. (2018) A Comparison of electron, proton and gamma irradiation effects on the I-V characteristics of 200 GHz SiGe HBTs. IEEE Transactions on Device and Materials Reliability, 18 (4). pp. 592-598. ISSN 1530-4388

Gnana Prakash, A. P. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Cressler, J. D. (2017) 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 172 (11-12). pp. 922-930. ISSN 1029-4953

Vinayak prasanna, N. H. and Praveen, K. C. and Cressler, J. D. and Gnana Prakash, A. P. (2017) Recovery of electrical characteristics of 80 MeV carbon ion irradiated SiGe HBTs by mixed mode electrical stress. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616

Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Tripathi, A. and Cressler, J. D. and Prakash, A. P. G. (2015) 80 MeV carbon ion irradiation effects on advanced 200 ghz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126.

Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Prakash, A. P. G. (2015) A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. INDIAN JOURNAL OF PHYSICS, 89 (8). pp. 789-796. ISSN 0974-9845

Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100â MeV oxygen ion and 60co gamma irradiation effects on advanced 200â GHz sige heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796.

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, S. and Tripathi, A. and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624. ISSN 1042-0150

Book Section

Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Prakash, A. P. G. A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. UNSPECIFIED. ISBN 9783319030029

Conference or Workshop Item

Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, A. and Gnana Prakash, A. P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. In: AIP Conference Proceedings.

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