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Hegde, V. N. and Hemaraju, B. C. and Pradeep, T. M. and Manju, V. V. and Cressler, J. D. and Gnana Prakash, A. P. (2020) An investigation on dose rate effect of 60Co gamma radiation on 200 GHz SiGe HBTs. In: UNSPECIFIED.
Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Cressler, J. D. and Gnana Prakash, A. P. (2018) A Comparison of electron, proton and gamma irradiation effects on the I-V characteristics of 200 GHz SiGe HBTs. IEEE Transactions on Device and Materials Reliability, 18 (4). pp. 592-598. ISSN 1530-4388
Gnana Prakash, A. P. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Cressler, J. D. (2017) 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 172 (11-12). pp. 922-930. ISSN 1029-4953
Vinayakprasanna, N. H. and Praveen, K. C. and Cressler, J. D. and Gnana Prakash, A. P. (2017) Recovery of electrical characteristics of 80 MeV carbon ion irradiated SiGe HBTs by mixed mode electrical stress. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Tripathi, A. and Cressler, J. D. and Gnana Prakash, A. P. (2015) 80 MeV carbon ion irradiation effects on advanced 200 ghz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126.
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796. ISSN 0974-9845
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100â MeV oxygen ion and 60co gamma irradiation effects on advanced 200â GHz sige heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796.
Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, S. and Tripathi, A. and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624. ISSN 1042-0150
Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, A. and Gnana Prakash, A. P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. In: AIP Conference Proceedings.
Praveen, K. C. and Pushpa, N. and Tripathi, A. and Revannasiddaiah, D. and Cressler, J. D. and Gnana Prakash, A. P. (2011) 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs. Radiation Effects and Defects in Solids, 166 (8-9, S). pp. 710-717. ISSN 1042-0150
Gnana Prakash, A. P. and Cressler, J. D. (2011) The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology. Radiation Effects and Defects in Solids, 166 (8-9, S). pp. 703-709. ISSN 1042-0150
Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Gnana Prakash, A. P. A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. UNSPECIFIED. ISBN 9783319030029
