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Vinayakprasanna, N. H. and Praveen, K. C. and Cressler, J. D. and Gnana Prakash, A. P. (2017) Recovery of electrical characteristics of 80 MeV carbon ion irradiated SiGe HBTs by mixed mode electrical stress. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616
Pradeep, T. M. and Vinayakprasanna, N. H. and Hemaraju, B. C. and Praveen, K. C. and Anjum, Arshiya and Pushpa, N. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616
Arshiya Anjum and Vinayakprasanna, N. H. and Pradeep, T. M. and Pushpa, N. and Krishna, J. B. M. and Gnana Prakash, A. P. (2016) A comparison of 4MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 265 - 271.
Bharathi, M. N. and Pushpa, N. and Vinayakprasanna, N. H. and Gnana Prakash, A. P. (2016) A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 822. 34 - 42.
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Tripathi, A. and Cressler, J. D. and Gnana Prakash, A. P. (2015) 80 MeV carbon ion irradiation effects on advanced 200 ghz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126.
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796. ISSN 0974-9845
Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100â MeV oxygen ion and 60co gamma irradiation effects on advanced 200â GHz sige heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796.
