Items where Author is "Naik, P. S."

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Jump to: Article
Number of items: 9.

Article

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, Shammi and Tripathi, Ambuj and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624.

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Prakash, A. P. Gnana (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 43-46.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Naik, P. S. and Cressler, J. D. and Gupta, S. K. and Revannasiddaiah, D. (2012) Reliability studies on NPN RF power transistors under swift heavy ion irradiation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 36-39.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Naik, P. S. and Tripathi, Ambuj and Gupta, S. K. and Revannasiddaiah, D. (2012) The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 40-42.

Praveen, K.C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. 20th International Conference on Ion Beam Analysis, 273. pp. 43-46. ISSN 0168-583X

Prakash, A. P. G. and Pushpa, N. and Praveen, K. C. and Naik, P. S. and Revannasiddaiah, D. (2012) Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices. AIP Conference Proceedings, 1447 (Pt. 1,). pp. 489-490. ISSN 0094-243X

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and Naik, P. S. and Cressler, J. D. and Prakash, A. P. G. (2012) A comparison of 100 MeV oxygen ion and C0-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12). Proceedings of SPIE, 8549 (16th I). 85490J/1-85490J/2. ISSN 0277-786X

Pushpa, N. and Praveen, K. C. and Prakash, A. P. G. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs. AIP Conference Proceedings, 1447 (Pt. 2,). pp. 1043-1044. ISSN 0094-243X

Pushpa, N. and Praveen, K. C. and Prakash, A. P. G. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13). Proceedings of SPIE, 8549 (16th I). 85490K/1-85490K/3. ISSN 0277-786X

This list was generated on Thu Oct 19 08:53:29 2017 IST.