Items where Author is "Bhuvaneswari, H. B."

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Article

Bhuvaneswari, H. B. and Hembram, K. P. S. S. and Rajagopal Reddy, V. and Mohan Rao, G. (2007) Studies on metal-semiconductor contacts with ZrN as metal layer. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 1 (6). pp. 294-298.

Bhuvaneswari, H. B. and Rajagopal Reddy, V. and Mohan Rao, G. (2006) Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 17 (5). pp. 335-339.

Bhuvaneswari, H. B. and Rajagopal Reddy, V. and Mohan Rao, G. (2005) Refractory metal nitride rectifying contact of ZrN on silicon. Journal of the Instrument Society of India, 35 (1, Cop). pp. 149-156. ISSN 0970-9983

Bhuvaneswari, H. B. and Reddy, V. Rajagopal and Chandramani, R. and Rao, G. Mohan (2004) Annealing effects on zirconium nitride films. APPLIED SURFACE SCIENCE, 230 (1-4). pp. 88-93.

Bhuvaneswari, H. B. and Priya, I. N. and Chandramani, R. and Reddy, V. Rajagopal and Rao, G. Mohan (2003) Studies on zirconium nitride films deposited by reactive magnetron sputtering. CRYSTAL RESEARCH AND TECHNOLOGY, 38 (12). pp. 1047-1051.

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