Annealing effects on zirconium nitride films

Bhuvaneswari, H. B. and Reddy, V. R. and Chandramani, R. and Rao, G. M. (2004) Annealing effects on zirconium nitride films. Applied Surface Science, 230 (1-4). pp. 88-93. ISSN 0169-4332

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ZrN films were deposited by dc reactive magnetron sputtering on silicon substrates under optimized nitrogen partial pressure of 6 x 10(-5) mbar. Structural, electrical and optical properties were systematically investigated. Films deposited at room temperature exhibited Schottky structure without any silicide interfacial layer. These films have electrical resistivity of 4.23 x 10(-3) Omega cm, which were crystalline in nature, with cubic (111) orientation. Refractive index and extinction coefficient were found to be 1.95 and 0.43, respectively at a wavelength of 350 nm. Samples were annealed for 1 h in air at two temperatures, 350 and 550 degreesC. Scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX) showed alloy penetration pits. Extent of penetration was greater in the films, which were annealed at higher temperature (550 degreesC). Variation in refractive index was observed in the range of 1.95-1.80 at 350 nm, for the annealed films, with increase in grain size from 7.25 to 11.10 nm. Poly-crystalline nature has been observed with (111) and (201) orientations. Resistivity is found to increase from 4.23 x 10(-3) to 6.21 x 10(-3) Omega cm. (C) 2004 Elsevier B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: sputtering; pits formation; nano-particles; Schottky devices; resistivity; annealing
Subjects: C Chemical Science > Chemistry
Divisions: PG Centre Hassan
Depositing User: Users 23 not found.
Date Deposited: 28 Aug 2019 10:35
Last Modified: 28 Aug 2019 10:35

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