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Gnana Prakash, A. P. and Bharathi, M. N. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Ambuj, T. (2018) The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors. Radiation Effects and Defects in Solids, 173 (7-8). pp. 683-693. ISSN 1042-0150
Bharathi, M. N. and Hegde, Vinayakprasanna N. and Anjum, Arshiya and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors. Radiation Effects and Defects in Solids, 172 (3-4). pp. 235-249. ISSN 1029-4953
Bharathi, M. N. and Pushpa, N. and Vinayakprasanna, N. H. and Gnana Prakash, A. P. (2016) A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 822. 34 - 42.
Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Gnana Prakash, A. P. A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. UNSPECIFIED. ISBN 9783319030029
Bharathi, M. N. and Praveen, K. C. and Pushpa, N. and Gnana Prakash, A. P. (2014) High total dose proton irradiation effects on silicon NPN rf power transistors. In: AIP Conference Proceedings.