Verma, S. and Praveen, K. C. and Kumar, T. and Kanjilal, D. (2013) In situ investigation of current transport across Pt/n-Si (100) Schottky junction during 100 MeV Ni+7 ion irradiation. IEEE Transactions on Device and Materials Reliability, 13 (1). pp. 98-102.
Full text not available from this repository. (Request a copy)Abstract
In situ current-voltage ( I - V ) analyses of Pt/n-Si (100) Schottky barrier (SB) diode are carried out during 100 MeV Ni +7 ion beam irradiation. The effect of MeV ion beam on the electrical parameters like ideality factor (η) and SB height (SBH) (φ B ) of SB diode is investigated. For lower fluences, SBH decreases from its preradiation value, but there is almost no change in SBH for ion fluences ranging from 5×10 11 to 1×10 13 ions/cm 2 . The reverse current is increased by about two orders of magnitude at the fluence of 5×10 13 ions/cm 2 which corresponds to an exposure of a few tens of years in low earth orbit. The radiation-induced diffusion of Schottky metal into the semiconductor and creation of trap centers at the metal-semiconductor interface are supposed to be the most plausible mechanisms for these deviations in SB diode characteristics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Diode characteristics, Diodes, Fermi level pinning, In-situ investigations, Ion beam irradiation, Ion beams, Irradiation, Metal semiconductor interface, Nickel, Radiation-induced diffusion, Schottky barrier diodes, Schottky barriers, Semiconductor diodes, Semiconductor metal boundaries, Silicon, Swift heavy ion irradiations (SHI) |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Arshiya Kousar Library Assistant |
| Date Deposited: | 05 Nov 2019 10:07 |
| Last Modified: | 05 Nov 2019 10:07 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/9647 |
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