Vermaand, S. and Praveen, K. C. and Bobby, A. and Kanjilal, D. (2014) Recovery of electrical characteristics of Au/n-Si schottky junction under ⁶⁰\hboxCo gamma irradiation. IEEE Transactions on Device and Materials Reliability, 14 (2). pp. 721-725.
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The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60 Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I-V ) and capacitance-voltage (C-V ) measurements. The electrical characteristics were measured at various doses of gamma by incrementally increasing the exposure from 0.85 Mrad (Si) to 340 Mrad (Si) to systematically study the dose effects on electrical transport across the Schottky interface. After irradiation, the ideality factor was found to decrease initially up to a dose of 17 Mrad (Si), and thereafter, it started increasing. At a dose of 340 Mrad (Si), the characteristics of the Schottky interface were found to recover toward the pristine characteristics. The recovery effect is attributed to annealing of interface defects due to the electronic energy loss S e of gamma ray photons.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | capacitance measurement;cobalt;electric current measurement;electron transport theory;elemental semiconductors;gamma-rays;gold;recovery;Schottky barriers;semiconductor junctions;silicon;voltage measurement;electrical transport characteristics;Au-n-Si metal-semiconductor Schottky barrier junction;60Co gamma rays;energy loss mechanisms;gamma irradiation;current-voltage measurements;I-V measurements;capacitance-voltage measurements;C-V measurements;Schottky interface;ideality factor;recovery effect;annealing;interface defects;electronic energy loss;gamma ray photons;radiation absorbed dose 0.85 Mrad to 340 Mrad;Au-Si;60Co;Radiation effects;Silicon;Annealing;Physics;Schottky diodes;Energy loss;Educational institutions;Defect annealing;gamma irradiation;I¿ V and C¿ V characteristics;Schottky barrier interface |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Arshiya Kousar Library Assistant |
| Date Deposited: | 05 Sep 2019 11:02 |
| Last Modified: | 05 Sep 2019 11:02 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/7661 |
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