Reddy, V. Rajagopal and Reddy, N. Ramesha and Choi, Chel-Jong (2005) Electrical and structural properties of low-resistance PtAgAu ohmic contacts to p-type GaN. Solid-State Electronics, 49 (7). 1213 - 1216. ISSN 0038-1101
Full text not available from this repository. (Request a copy)Abstract
A Pt (20nm)Ag (50nm)Au (30nm) metallization scheme has been investigated for producing low-resistance ohmic contacts to moderately doped p-type GaN (1.3×1017cm−3). It is shown that the as-deposited contacts exhibit a linear I–V characteristic with a specific contact resistance of 4.43×10−3Ωcm2. The PtAg/Au contact produced a specific contact resistance as low as 1.70×10−4Ωcm2 after annealing at 800°C for 1min in a N2 atmosphere. It is further shown that the surface morphology of the contact annealed at 800°C (RMS roughness of 19.9nm) became somewhat degraded compared with that of the as-deposited one (RMS roughness of 3.3nm). Based on the Auger electron microscopy and X-ray diffraction results, possible explanations for the improvement of the ohmic behavior are described.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Electrical and structural properties, Pt/Ag/Au ohmic contacts, Spectroscopy, X-ray diffraction, p-GaN |
| Subjects: | D Physical Science > Electronic |
| Divisions: | PG Centre Hassan > Electronics |
| Depositing User: | Manjula P Library Assistant |
| Date Deposited: | 05 Sep 2019 10:01 |
| Last Modified: | 05 Sep 2019 10:01 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/7645 |
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