Reddy, V. Rajagopal and Rao, P. Koteswara (2008) Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN. Microelectronic Engineering, 85 (2). 470 - 476. ISSN 1873-5568
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Schottky contacts were fabricated on n-type GaN using a Cu/Au metallization scheme, and the electrical and structural properties have been investigated as a function of annealing temperature by current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) measurements. The extracted Schottky barrier height of the as-deposited contact was found to be 0.69eV (I–V) and 0.77eV (C–V), respectively. However, the Schottky barrier height of the Cu/Au contact slightly increases to 0.77eV (I–V) and 1.18eV (C–V) when the contact was annealed at 300°C for 1min. It is shown that the Schottky barrier height decreases to 0.73eV (I–V) and 0.99eV (C–V), 0.56eV (I–V) and 0.87eV (C–V) after annealing at 400°C and 500°C for 1min in N2 atmosphere. Norde method was also used to extract the barrier height of Cu/Au contacts and the values are 0.69eV for the as-deposited, 0.76eV at 300°C, 0.71eV at 400°C and 0.56eV at 500°C which are in good agreement with those obtained by the I–V method. Based on Auger electron spectroscopy and X-ray diffraction results, the formation of nitride phases at the Cu/Au/n-GaN interface could be the reason for the degradation of Schottky barrier height upon annealing at 500°C.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Electrical and structural properties, Cu/Au Schottky diode, Auger electron microscopy, X-ray diffraction |
| Subjects: | D Physical Science > Electronic |
| Divisions: | PG Centre Hassan > Electronics |
| Depositing User: | Manjula P Library Assistant |
| Date Deposited: | 26 Aug 2019 07:54 |
| Last Modified: | 26 Aug 2019 07:54 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/7046 |
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