Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs. AIP Conference Proceedings, 1447 (1). pp. 1043-1044. ISSN 1551-7616
Full text not available from this repository. (Request a copy)Abstract
N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 175 MeV Ni3+ ions and Co-60 gamma radiation in the dose range of 100 krad to 100 Mrad. The I-V characteristics of MOSFETs were studied systematically before and after ion and gamma irradiation. The threshold voltage (VTH) of the irradiated MOSFETs was found to decrease with increase in ion and gamma dose. The more degradation was observed in the devices irradiated with Co-60 gamma radiation than irradiated with Ni13+ ions at given total doses.
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 22 Aug 2019 10:34 |
| Last Modified: | 22 Aug 2019 10:34 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6920 |
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