Vinay Kumar, M. and Krishnakumar, K. S. and Dinesh, C. M. and Krishnaveni, S. and Ramani (2012) Effect of 100MeV oxygen ion irradiation on silicon NPN power transistor. AIP Conference Proceedings, 1447 (1). pp. 1085-1086. ISSN 1551-7616
Full text not available from this repository. (Request a copy)Abstract
The radiation response of npn Bipolar junction transistor (BJT) has been examined for 100 MeV O7+ ion. Key electrical properties like Gummel characteristics, dc current gain and capacitance–voltage of 100MeV O7+ ion irradiated transistor were studied before and after irradiation. The device was decapped and the electrical characterizations were performed at room temperature. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence, also considerable degradation in C-V characteristics is observed and doping concentration is found to be increased along with the increase in ion fluence.
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 22 Aug 2019 10:32 |
| Last Modified: | 22 Aug 2019 10:32 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6919 |
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