Gnana Prakash, A. P. and Pushpa, N. and Praveen, K. C. and Naik, P. S. and Revannasiddaiah, D. (2012) Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices. AIP Conference Proceedings, 1447 (1). pp. 489-490. ISSN 1551-7616
Full text not available from this repository. (Request a copy)Abstract
In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 22 Aug 2019 10:26 |
| Last Modified: | 22 Aug 2019 10:26 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6914 |
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