Reddy, Varra Rajagopal and Ravinandan, M. and Rao, Koteswara P. and Choi, Chel-Jong (2009) Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 20 (10). pp. 1018-1025. ISSN 0957-4522
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Thermal annealing temperature effects on the electrical and structural properties of platinum/molybdenum (Pt/Mo) Schottky contacts on n-type GaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) techniques. As-deposited Pt/Mo/n-GaN Schottky diode exhibits barrier height of 0.75 eV (I-V) and 0.82 eV (C-V). Upon annealing at 400 and 500 A degrees C, the barrier height slightly increased to 0.77 eV (I-V) and 0.92 eV (C-V) and 0.82 eV (I-V) and 0.97 eV (C-V), respectively. A maximum barrier height of 0.83 eV (I-V) and 0.99 eV (C-V) is obtained on the Pt/Mo contacts annealed at 600 A degrees C. X-ray photoelectron spectroscopy results shows that the Ga 2p core-level shift towards the low-energy side for the contact annealed at 600 A degrees C as compared to the as-deposited one. Based on the results of XPS and XRD studies, the formation of gallide phases at Pt/Mo/n-GaN interface could be the reason for the increase of Schottky barrier heights upon annealing at elevated temperatures. The atomic force microscopy (AFM) results showed that the Pt/Mo contact does not seriously suffer from thermal degradation during annealing even at 600 A degrees C (RMS roughness of 5.41 nm). These results make Pt/Mo Schottky contacts attractive for high temperature device applications.
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Electronic |
| Divisions: | PG Centre Hassan > Electronics |
| Depositing User: | Users 19 not found. |
| Date Deposited: | 17 Aug 2019 11:24 |
| Last Modified: | 17 Aug 2019 11:24 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6710 |
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