Reddy, N. Ramesha and Reddy, V. Rajagopal and Choi, Chel-Jong (2006) Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN. Microelectronic Engineering, 83 (10). 1981 - 1985. ISSN 1873-5568
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We have investigated the microstructural and electrical characteristics of Ti/W/Au ohmic contacts on n-type GaN (4.0×1018cm−3) using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) after annealing at 900°C. It is shown that the electrical properties are improved upon annealing at 900°C for 1min in nitrogen ambient. The 900°C annealed contact produced a specific contact resistance of 8.4×10−6Ωcm2. It is further shown that the contact exhibits thermal stability during annealing at 900°C. Based on the Auger electron microscopy and transmission electron microscopy studies, the formation of TiN layer results in an excess of N vacancies near the surface of the GaN layer, which could be the reason for the low-resistance of the Ti/W/Au contact.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Microstructural, Ohmic contacts, Auger electron microscopy, Transmission electron microscopy |
| Subjects: | D Physical Science > Electronic |
| Divisions: | PG Centre Hassan > Electronics |
| Depositing User: | LA manjunath user |
| Date Deposited: | 12 Aug 2019 11:57 |
| Last Modified: | 12 Aug 2019 11:57 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6297 |
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