Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Tripathi, Ambuj and Gupta, S. K. and Revannasiddaiah, D. (2012) The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 40 - 42. ISSN 0168-583X
Full text not available from this repository. (Request a copy)Abstract
N-channel depletion MOSFETs were irradiated with 140MeV Si10+ ions, 100MeV F8+ ions and 48MeV Li3+ ions in the dose range from 100krad to 100Mrad. The MOSFET parameters such as threshold voltage (VTH), transconductance (gm) and mobility of carriers (μ) were determined by systematically studying the I–V characteristics before and after irradiation. The ion irradiated results were compared with Co-60 gamma irradiated results in the same dose range. The degradation in VTH, gm and μ was found to be more for the devices irradiated with Co-60 gamma radiation than that irradiated with swift heavy ions.
| Item Type: | Article |
|---|---|
| Additional Information: | 20th International Conference on Ion Beam Analysis |
| Uncontrolled Keywords: | MOSFET, Interface trapped charge, Oxide trapped charge, Threshold voltage, Transconductance, Mobility degradation |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 23 Jul 2019 05:57 |
| Last Modified: | 23 Jul 2019 05:57 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/5457 |
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