Vinayakprasanna, N. H. and Praveen, K. C. and Pushpa, N. and Cressler, J. D. and Gnana Prakash, A. P. (2015) A comparison of 100â MeV oxygen ion and 60co gamma irradiation effects on advanced 200â GHz sige heterojunction bipolar transistors. Indian Journal of Physics, 89 (8). pp. 789-796.
Full text not available from this repository. (Request a copy)Abstract
The third-generation (200 GHz) silicon–germanium heterojunction bipolar transistors were irradiated with 100 MeV oxygen [O7+] ions in the dose range from 1 to 100 Mrad. The different electrical characteristics like forward-mode and inverse-mode Gummel characteristics, the normalized base current, excess base current, the current gain, damage constant, neutral base recombination, avalanche multiplication and the output characteristics were measured before and after irradiation. The ion irradiation results were compared with 60Co gamma irradiation results to understand the linear energy transfer effects on the electrical characteristics on silicon–germanium heterojunction bipolar transistors. The stopping range of ions in matter simulation study was conducted to understand the energy loss of 100 MeV O7+ ions in silicon–germanium heterojunction bipolar transistor structure.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 200Â GHz Silicon-Germanium Heterojunction Bipolar Transistor and 100Â MeV Oxygen Ion Irradiation and Stopping and Range of Ions in Matter Simulations and Excess Base Current |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Users 19 not found. |
| Date Deposited: | 27 Jun 2019 05:27 |
| Last Modified: | 27 Jun 2019 05:27 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/3910 |
Actions (login required)
 |
View Item |
