Arshiya Anjum and Vinayakprasanna, N. H. and Pradeep, T. M. and Pushpa, N. and Krishna, J. B. M. and Gnana Prakash, A. P. (2016) A comparison of 4MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 265 - 271.
Full text not available from this repository. (Request a copy)Abstract
N-channel depletion MOSFETs were irradiated with 4MeV Proton and Co-60 gamma radiation in the dose range of 100krad(Si) to 100Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (μ), leakage current (IL) and drain saturation current (ID Sat) were studied as a function of dose. A considerable increase in ΔNit and ΔNot and decrease in Vth, gm, μ, and ID Sat was observed after irradiation. The results of 4MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation.
| Item Type: | Article |
|---|---|
| Additional Information: | 18th International Conference on Radiation Effects in Insulators (REI-18) Dates: 26th to 31st October, 2015 |
| Uncontrolled Keywords: | MOSFET, Interface trapped charges, Oxide trapped charges, Protons |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Manjula P Library Assistant |
| Date Deposited: | 20 Jun 2019 06:02 |
| Last Modified: | 20 Jun 2019 06:02 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/3465 |
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