Anjum, Arshiya and Pradeep, T. M. and Vinayakprasanna, N. H. and Pushpa, N. and Tripathi, Ambuj and Gnana Prakash, A. P. (2019) Analysis of 80-MeV Carbon and 80-MeV Nitrogen Ion Irradiation Effects on N-Channel MOSFETs. IEEE Transactions on Device and Materials Reliability, 19 (4). pp. 696-703. ISSN 1530-4388
Full text not available from this repository. (Request a copy)Abstract
N-channel depletion MOSFETs were irradiated with 80 MeV Carbon (C6+) and 80 MeV Nitrogen (N6+) ions in the dose range from 100 krad (Si) to 30 Mrad (Si). The electrical characteristics of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ANit), density of oxide trapped charges (ANot), transconductance (gm), mobility (μ), leakage current (IL) and drain saturation current (IDSat) were studied as a function of dose. A considerable increase in ANit and ANot and decrease in Vth, gm, μ, and ID Sat was observed after irradiation. The μ was correlated with ANit and it is found that the contribution of ANot in degrading the mobility of charge carriers is negligible.The ion irradiated results were compared with Co-60 gamma irradiated results and found that the degradation is more for Co-60 gamma irradiated devices at lower doses, whereas at higher doses, the degradation is more for heavy ion irradiated devices.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOSFET;Radiation effects;Silicon;Ionization;Charge carrier processes;N-channel DMOSFETs;swift heavy ion irradiation;⁶⁰Co gamma;oxide trapped charges;interface trapped charges |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 21 Nov 2025 05:55 |
| Last Modified: | 21 Nov 2025 05:55 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/17967 |
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