Sooryanarayana, K. and Row, T. N. G. and Somashekar, R. and Varma, K. B. R. (1998) Influence of inherent strain on the curie temperature of rare earth ion-doped bismuth vanadate. Bulletin of Materials Science, 21 (6). pp. 499-502.
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Influence of inherent strain on the curie temperature of rare earth ion-doped bismuth vanadate.pdf Restricted to Registered users only Download (243kB) | Request a copy |
Abstract
X-ray line broadening is found to be an effective parameter to estimate the strain associated with rare earth ion (Gd3+)-doped polycrystalline bismuth vanadate(Bi2VO5.5). The strain increases with increasing Gd3+ concentration. It is anisotropic and found to be maximum in (111) plane. The Curie temperature which is known to decrease with increase in the rare earth ion concentration in these compounds is correlated with increase in strain.
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Users 23 not found. |
| Date Deposited: | 10 Jun 2021 05:28 |
| Last Modified: | 07 Jan 2023 07:14 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/16685 |
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