Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models

Kumar, S. and Kumar, M. V. and Krishnaveni, S. (2020) Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models. Semiconductors, 54 (2). pp. 169-175. ISSN 1090-6479

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Abstract

The current transport mechanism of indigenously fabricated Ni/n-GaN Schottky barrier diodes (SBDs) has been analysed using the current-voltage (I-V) and capacitance-voltage (C-V) measurements. Various models like Rhoderick's method, Cheung's method, Norde's method, modified Norde's method, Hernandez's method, and Chattopadhyay's method have been used to extract the different electric parameters from the I-V curve. A comparison has been made between the various electrical parameters such as ideality factor, barrier height, and series resistance, which are extracted from the forward bias I-V curve of Ni/n-GaN SBDs. The carrier concentration of the substrate and the barrier height is obtained from C-V characteristics of Ni/n-GaN SBDs. We observe from the reverse current characteristics that the Ni/n-GaN SBDs show the dominance of Schottky emission in intermediate and higher voltages.

Item Type:	Article
Uncontrolled Keywords:	Schottky contacts; GaN; electrical properties; Rhoderick's method; Cheung's method; Norde's method; Modified Norde's method; Hernandez's method; Chattopadhyay's method; current transport mechanism
Subjects:	D Physical Science > Physics
Divisions:	Department of > Physics
Depositing User:	Mr Umendra uom
Date Deposited:	04 Feb 2021 07:14
Last Modified:	04 Feb 2021 07:14
URI:	http://eprints.uni-mysore.ac.in/id/eprint/15641

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