Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

Kumar, Santosh and Zhang, Xiang and Mariswamy, Vinay Kumar and Reddy, Varra Rajagopal and Kandasami, Asokan and Nimmala, Arun and Rao, S. V. S. Nageswara and Tang, Jue and Ramakrishnna, Seeram and Krishnaveni (2020) Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials, 13 (6). ISSN 1996-1944

Text materials-13-01299.pdf - Published Version Restricted to Repository staff only Download (4MB) | Request a copy

Abstract

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 x 10(13) to 1 x 10(15) ions cm(-2). The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 x 10(13) ions cm(-2) and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion.

Item Type:	Article
Uncontrolled Keywords:	GaN Schottky Diodes; MEI irradiation; NIEL; LET; Electrical parameters; Charge transport mechanism; surface morphology; optically active defects
Subjects:	D Physical Science > Physics
Divisions:	Department of > Physics
Depositing User:	Mr Umendra uom
Date Deposited:	16 Feb 2021 05:55
Last Modified:	19 Jun 2023 09:44
URI:	http://eprints.uni-mysore.ac.in/id/eprint/15613

Actions (login required)

View Item