Items where Author is "Tripathi, Ambuj"

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Number of items: 10.

Article

Vinayakprasanna, N. H. and Praveen, C. K. and Pushpa, N. and Tripathi, Ambuj and Cressler, J. D. and Gnana Prakash, A. P. (2015) 80 MeV carbon ion irradiation effects on advanced 200 GHz silicon-germanium heterojunction bipolar transitors. Advanced Materials Letters, 6 (2). pp. 120-126. ISSN 0976-397X

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, Shammi and Tripathi, Ambuj and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624.

Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, Ambuj and Gnana, P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. AIP Conference Proceedings, 1512 (Solid ). pp. 1030-1031. ISSN 0094-243X

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Prakash, A. P. Gnana (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 43-46.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Naik, P. S. and Tripathi, Ambuj and Gupta, S. K. and Revannasiddaiah, D. (2012) The effect of swift heavy ion irradiation on threshold voltage, transconductance and mobility of DMOSFETs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 273. pp. 40-42.

Praveen, K.C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs. 20th International Conference on Ion Beam Analysis, 273. pp. 43-46. ISSN 0168-583X

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and Naik, P. S. and Cressler, J. D. and Prakash, A. P. G. (2012) A comparison of 100 MeV oxygen ion and C0-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12). Proceedings of SPIE, 8549 (16th I). 85490J/1-85490J/2. ISSN 0277-786X

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and John Cressler, D. and Gnana Prakash, A. P. (2011) 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 166 (8-9, S). pp. 710-717.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Rao, Y. P. Prabhakara and Tripathi, Ambuj and Revannasiddaiah, D. (2010) An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 620 (2-3). pp. 450-455.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. Gnana and Rao, Y. P. Prabhakara and Tripathi, Ambuj and Govindaraj, G. and Revannasiddaiah, D. (2010) A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 613 (2). pp. 280-289.

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