 | Up a level |
Kumar, S. and Mariswamy, V. Kumar and Kumar, A. and Kandasami, A. and Nimmala, A. and Rao, S. V. S. Nageswara and Reddy, V. Rajagopal and Sannathammegowda, K. (2020) Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes. Semiconductors, 54 (12). pp. 1641-1649. ISSN 1090-6479
Kumar, Santosh and Zhang, Xiang and Mariswamy, Vinay Kumar and Reddy, Varra Rajagopal and Kandasami, Asokan and Nimmala, Arun and Rao, S. V. S. Nageswara and Tang, Jue and Ramakrishnna, Seeram and Krishnaveni (2020) Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials, 13 (6). ISSN 1996-1944
