Items where Author is "Rajagopal Reddy, V. "

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Number of items: 25.

Article

Rajagopal Reddy, V. and Ravinandan, M. and Koteswara Rao, P. and Chel-Jong Choi, (2009) Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 20 (10). pp. 1018-1025.

Ravinandan, M. and Koteswara Rao, P. and Rajagopal Reddy, V. (2009) Analysis of the current-voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature range. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 24 (3).

Rajagopal Reddy, V. and Kim, Sang-Ho and Hong, Hyun-Gi and Yoon, Sang-Won and Ahn, Jae-Pyoung and Seong, Tae-Yeon (2009) Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 20 (1). pp. 9-13.

Jagadeswara Reddy, K. and Rajagopal Reddy, V. and Narasimha Reddy, P. (2008) Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 19 (4). pp. 333-338.

Rajagopal Reddy, V. and Koteswara Rao, P. (2008) Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN. MICROELECTRONIC ENGINEERING, 85 (2). pp. 470-476.

Rajagopal Reddy, V. and Chel-Jong Choi, (2007) Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 204 (10). pp. 3392-3397. (Unpublished)

Rajagopal Reddy, V. and Koteswara Rao, P. and Ramesh, C. K. (2007) Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 137 (1-3). pp. 200-204.

Jagadeswara Reddy, K. and Rajagopal Reddy, V. and Narasimha Reddy, P. and Koteswara Rao, K. S. R. (2007) Effects of thermal annealing on electrical and structural characteristics of Pd/n-GaN Schottky diode. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 1 (3). pp. 91-95.

Bhuvaneswari, H. B. and Hembram, K. P. S. S. and Rajagopal Reddy, V. and Mohan Rao, G. (2007) Studies on metal-semiconductor contacts with ZrN as metal layer. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 1 (6). pp. 294-298.

Ramesh, C. K. and Rajagopal Reddy, V. and Koteswara Rao, K. S. R. (2006) Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 17 (12). pp. 999-1004.

Rajagopal Reddy, V. and Ramesha Reddy, N. and Chel-Jong Choi, (2006) The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 21 (12). pp. 1753-1757.

Ramesha Reddy, N. and Rajagopal Reddy, V. and Chel-Jong Choi, (2006) Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN. MICROELECTRONIC ENGINEERING, 83 (10). pp. 1981-1985.

Bhuvaneswari, H. B. and Rajagopal Reddy, V. and Mohan Rao, G. (2006) Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 17 (5). pp. 335-339.

Rajagopal Reddy, V. and Ramesh, C. K. and Chel-Jong Choi, (2006) Structural and electrical properties of Mo/n-GaN Schottky diodes. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 203 (3). pp. 622-627.

Rajagopal Reddy, V. (2005) Study of the electrical, structural and surface morphological characteristics of Pt/Re/Au ohmic contacts on p-type GaN. MATERIALS CHEMISTRY AND PHYSICS, 93 (2-3). pp. 286-290.

Rajagopal Reddy, V. and Kim, S. H. and Seong, Tae-Yeon (2005) Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 81 (3). pp. 561-564.

Rajagopal Reddy, V. and Ramesha Reddy, N. and Chel-Jong Choi, (2005) Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN. SOLID-STATE ELECTRONICS, 49 (7). pp. 1213-1216.

Bhuvaneswari, H. B. and Rajagopal Reddy, V. and Mohan Rao, G. (2005) Refractory metal nitride rectifying contact of ZrN on silicon. Journal of the Instrument Society of India, 35 (1, Cop). pp. 149-156. ISSN 0970-9983

Ramesh, C. K. and Rajagopal Reddy, V. and Chel-Jong Choi, (2004) Electrical characteristics of molybdenum Schottky contacts on n-type GaN. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 112 (1). pp. 30-33.

Rajagopal Reddy, V. and Kim, Sang-Ho and Song, June-O and Seong, Tae-Yeon (2004) Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN. SOLID-STATE ELECTRONICS, 48 (9). pp. 1563-1568.

Rajagopal Reddy, V. and Seong, Tae-Yeon (2004) Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (8). pp. 975-979.

Rajagopal Reddy, V. and Ramesh, C. K. and Narasimha Reddy, P. (2004) Interfacial reaction and surface morphology of Pd/Re contact schemes to p-type GaN. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 42 (5). pp. 361-365.

Rajagopal Reddy, V. and Ramesh, C. K. (2004) Low-resistance ohmic contacts to N-type GaN using Ti/Al/Re/Au multilayer scheme. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6 (1). pp. 177-182.

Rajagopal Reddy, V. and Ramesh, C. K. and Narasimha Reddy, P. (2004) Interfacial reaction and surface morphology of Pd/Re contact schemes to p-type GaN. Indian Journal of Pure and Applied Physics, 42. pp. 361-365. ISSN 0019-5596

Rajagopal Reddy, V. and Seong, Tae-Yeon and Kim, Sang-Ho and Song, June-O (2003) Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18 (6). pp. 541-544.

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