 | Up a level |
Raghavendra, M. and Jagadish, K. and Srikantaswamy, S. and Pradeep, T. M. and Gnana Prakash, A. P. and Ravikumar, H. B. (2021) Effect of CeO2 nanoparticles on dielectric properties of PVB/CeO2 polymer nanodielectrics: a positron lifetime study. Journal of Materials Science: Materials in Electronics, 33. pp. 1063-1077. ISSN 1573-482X
Pradeep, T. M. and Hegde, Vinayakprasanna N. and Pushpa, N. and Bhushan, K. G. and Gnana Prakash, A. P. (2018) Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors. Indian Journal of Pure & Applied Physics, 56. pp. 646-649. ISSN 0019-5596
Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Cressler, J. D. and Gnana Prakash, A. P. (2018) A Comparison of electron, proton and gamma irradiation effects on the I-V characteristics of 200 GHz SiGe HBTs. IEEE Transactions on Device and Materials Reliability, 18 (4). pp. 592-598. ISSN 1530-4388
Gnana Prakash, A. P. and Bharathi, M. N. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Ambuj, T. (2018) The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors. Radiation Effects and Defects in Solids, 173 (7-8). pp. 683-693. ISSN 1042-0150
Gnana Prakash, A. P. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Cressler, J. D. (2017) 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 172 (11-12). pp. 922-930. ISSN 1029-4953
Bharathi, M. N. and Hegde, Vinayakprasanna N. and Anjum, Arshiya and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors. Radiation Effects and Defects in Solids, 172 (3-4). pp. 235-249. ISSN 1029-4953
Gnana Prakash, A. P. and Pradeep, T. M. and Hegde, Vinayakprasanna N. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Bhushan, K. G. (2017) Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs. Radiation Effects and Defects in Solids, 172 (11-12). pp. 952-963. ISSN 1029-4953
Pradeep, T. M. and Vinayakprasanna, N. H. and Hemaraju, B. C. and Praveen, K. C. and Anjum, Arshiya and Pushpa, N. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) An investigation of 80 MeV nitrogen ion irradiation on silicon NPN transistors. AIP Conference Proceedings, 1832 (1). ISSN 1551-7616
Arshiya Anjum and Vinayakprasanna, N. H. and Pradeep, T. M. and Pushpa, N. and Krishna, J. B. M. and Gnana Prakash, A. P. (2016) A comparison of 4MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379. 265 - 271.
Hegde, V. N. and Hemaraju, B. C. and Pradeep, T. M. and Manju, V. V. and Cressler, J. D. and Gnana Prakash, A. P. (2020) An investigation on dose rate effect of 60Co gamma radiation on 200 GHz SiGe HBTs. In: UNSPECIFIED.
