 | Up a level |
Bhagya, K. R. and Basavaraj, R. B. and Jyothi, K. R. and Nagabhushana, H. and Murugendrappa, M. and Gnana Prakash, A. P. and Nagabhushana, N. M. and Hegde, Vinayakprasanna N. (2021) Dy3+ doped Y2MoO6 nanopowders for white light emission: Spectroscopic and transport properties for optoelectronic and energy harvesting applications. Colloid and Interface Science Communications, 43.
Aneesh Kumar, K. V. and Raghavendra, M. and Hegde, Vinayakprasanna N. and Gnana Prakash, A. P. and Ravikumar, H. B. (2021) Gamma irradiation induced microstructural modifcation and electrical conductivity of bakelite resistive plate chamber material. Journal of Radioanalytical and Nuclear Chemistry, 327 (2). pp. 821-829.
Jyothi, K. R. and Bhagya, K. R. and Nagabhushana, H. and Murugendrappa, M. and Gnana Prakash, A. P. and Hegde, Vinayakprasanna N. and Nagabhushana, N. M. (2020) Facile green synthesis, characterization and transport properties of LiAlSiO4:Ce3+ nanocomposites. Ceramics International, 46 (7). pp. 9706-9713. ISSN 1873-3956
Jyothi, K. R. and Bhagya, K. R. and Nagabhushana, H. and Hegde, Vinayakprasanna N. and Murugendrappa, M. and Gnana Prakash, A. P. and Prasad, Daruka B. and Nagabhushana, N. M. (2020) Synthesis and characterization of advanced functional dysprosium doped Sr2MgSi2O7 nanopowders for white LED application. Physica B: Condensed Matter, 590. ISSN 1873-2135
Pradeep, T. M. and Hegde, Vinayakprasanna N. and Pushpa, N. and Bhushan, K. G. and Gnana Prakash, A. P. (2018) Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors. Indian Journal of Pure & Applied Physics, 56. pp. 646-649. ISSN 0019-5596
Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Cressler, J. D. and Gnana Prakash, A. P. (2018) A Comparison of electron, proton and gamma irradiation effects on the I-V characteristics of 200 GHz SiGe HBTs. IEEE Transactions on Device and Materials Reliability, 18 (4). pp. 592-598. ISSN 1530-4388
Ningaraju, S. and Hegde, Vinayakprasanna N. and Gnana Prakash, A. P. and Ravikumar, H. B. (2018) Free volume dependence on electrical properties of Poly (styrene co-acrylonitrile)/Nickel oxide polymer nanocomposites. Chemical Physics Letters, 698. 24 - 35. ISSN 0009-2614
Gnana Prakash, A. P. and Bharathi, M. N. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Ambuj, T. (2018) The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors. Radiation Effects and Defects in Solids, 173 (7-8). pp. 683-693. ISSN 1042-0150
Gnana Prakash, A. P. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Cressler, J. D. (2017) 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 172 (11-12). pp. 922-930. ISSN 1029-4953
Bharathi, M. N. and Hegde, Vinayakprasanna N. and Anjum, Arshiya and Pradeep, T. M. and Pushpa, N. and Praveen, K. C. and Bhushan, K. G. and Gnana Prakash, A. P. (2017) Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors. Radiation Effects and Defects in Solids, 172 (3-4). pp. 235-249. ISSN 1029-4953
Gnana Prakash, A. P. and Pradeep, T. M. and Hegde, Vinayakprasanna N. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Bhushan, K. G. (2017) Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs. Radiation Effects and Defects in Solids, 172 (11-12). pp. 952-963. ISSN 1029-4953
