Items where Author is "Cressler, John D."

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Jump to: Article
Number of items: 6.

Article

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, John D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50GHz SiGe HBTs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 43 - 46. ISSN 0168-583X

Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Cressler, John D. and Gupta, S. K. and Revannasiddaiah, D. (2012) Reliability studies on NPN RF power transistors under swift heavy ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 36 - 39. ISSN 0168-583X

Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101

Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101

Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101

Pushpa, N. and Gnana Prakash, A. P. and Praveen, K. C. and Cressler, John D. and Revannasiddaiah, D. (2009) An investigation of electron and oxygen ion damage in Si npn RF power transistors. Radiation effects and defects in solids, 164 (10). pp. 592-603. ISSN 1042-0150

This list was generated on Sat Feb 29 00:46:36 2020 IST.