Praveen, K. C. and Pushpa, N. and Shiva, H. B. and Cressler, J. D. and Tripathi, A. and Gnana Prakash, A. P. (2013) A comparison of 75 MeV boron and 50 MeV lithium ion irradiation effects on 200 GHz SiGe HBTs. In: AIP Conference Proceedings.
Full text not available from this repository. (Request a copy)Abstract
The third generation Silicon-Germanium Heterojunction Bipolar Transistors (200 GHz SiGe HBTs) were irradiated with 50 MeV Lithium and 75 MeV Boron ions in the dose ranging from 1 Mrad to 100 Mrad. The different electrical characteristics like forward-mode Gummel characteristics, inverse-mode Gummel characteristics, excess base current and current gain were studied before and after ion irradiation. The damage constants for 50 MeV Li3+ and 100 MeV B5+ ion irradiated SiGe HBTs were calculated using Messenger-Spratt equation.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Arshiya Kousar Library Assistant |
| Date Deposited: | 17 Oct 2019 10:01 |
| Last Modified: | 17 Oct 2019 10:01 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/9187 |
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