Prabhakara Rao, Y. P. and Praveen, K. C. and Rani, Y. R. and Gnana Prakash, A. P. (2013) Reliability studies on Si PIN photodiodes under Co-60 gamma radiation. In: AIP Conference Proceedings.
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Official URL: http://doi.org/10.1063/1.4791394
Abstract
Silicon PIN photodiodes were fabricated with 250 nm SiO2 antireflective coating (ARC). The changes in the electrical characteristics, capacitance-voltage characteristics and spectral response after gamma irradiation are systematically studied to estimate the radiation tolerance up to 10 Mrad. The different characteristics studied in this investigation demonstrate that Si PIN photodiodes are suitable for high radiation environment.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Arshiya Kousar Library Assistant |
| Date Deposited: | 17 Oct 2019 09:59 |
| Last Modified: | 17 Oct 2019 09:59 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/9186 |
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