In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors

Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, J. D. and Shiva, H. B. and Verma, S. and Tripathi, A. and Gnana Prakash, A. P. (2013) In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon-germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168 (7-8). pp. 620-624. ISSN 1042-0150

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Official URL: http://doi.org/10.1080/10420150.2013.787073

Abstract

First-generation (50 GHz) silicon-germanium heterojunction bipolar transistors (SiGe HBT) were irradiated with 75 MeV boron ions and 100 MeV oxygen ions. The aim of the present investigation is to study the degradation of current-voltage (I-V) characteristics due to different linear energy transfer ions. The in situ I-V characteristics were measured before and after ion irradiation are forward mode and inverse mode Gummel characteristics, excess base current and current gain. It was found that the oxygen ion-irradiated SiGe HBT showed slightly more degradation when compared with boron ion-irradiated devices. The damage constant was calculated using the Messenger-Spratt equation, which confirmed more degradation in the case of oxygen ion-irradiated HBTs. © 2013 Taylor and Francis Group, LLC.

Item Type: Article
Uncontrolled Keywords: Boron, Current gain degradation, Energy transfer, Excess base current, Heterojunction bipolar transistors, In-situ investigations, Ion irradiation effects, Ions, Irradiation, IV characteristics, Linear energy transfer, Oxygen, SiGe HBTs, Silicon germanium heterojunction bipolar transistors
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: Arshiya Kousar Library Assistant
Date Deposited: 22 Oct 2019 06:22
Last Modified: 22 Oct 2019 06:22
URI: http://eprints.uni-mysore.ac.in/id/eprint/9137

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