Gamma irradiation of platinum- and palladium-related deep levels in silicon

Reddy, S. V. and Pandurangaiah, S. V. and Reddy, P. N. and Reddy, V. R. and Rao, K. S. R. K. (2000) Gamma irradiation of platinum- and palladium-related deep levels in silicon. Indian Journal of Pure & Applied Physics, 38 (4). pp. 258-262. ISSN 0019-5596

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Abstract

Effect of 1.1 MeV gamma irradiation has been studied on Au/n- Si:Pt and Au/n-Si:Pd Schottky barrier diodes. A comparison of the results from these two types of structures illustrate the influence of device processing on the type of defects formed by subsequent irradiation. Before irradiation the energy levels for Pt and Pd in n-type silicon have been observed at E-c-0.28 eV, E-c-0.52 eV and E-c-0.22 eV respectively. After irradiation and annealing all the energy levels due to irradiation are disappeared except E-c-0.28 eV in Au/n-Si:Pt and E-c-0.22 eV in Au/n-Si:Pd Schottky diodes.

Item Type:	Article
Additional Information:	Venkatramana Reddy S. Rajagopal Reddy V.
Subjects:	D Physical Science > Electronic
Divisions:	PG Centre Hassan > Electronics
Depositing User:	Users 19 not found.
Date Deposited:	25 Sep 2019 05:45
Last Modified:	25 Sep 2019 05:45
URI:	http://eprints.uni-mysore.ac.in/id/eprint/8493

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