Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN

Reddy, V. Rajagopal and Choi, Chel-Jong (2007) Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN. Physica Status Solidi (a), 204 (10). pp. 3392-3397. ISSN 1862-6319

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Abstract

The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n-type GaN (4.0 × 1018 cm–3) have been investigated by current–voltage (I –V), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The electrical characteristics of as-deposited and annealing at temperatures below 800 °C samples exhibit non-linear behaviour. However, the sample showed ohmic behaviour when the contact is annealed at 900 °C for 1 min in nitrogen ambient. The Ti/Re/Au contacts give specific contact resistance as low as 8.6 × 10–6 Ω cm2 after annealing at 900 °C. It is shown that the surface of the as-deposited contact is fairly smooth and slightly degraded when the contact is annealed at 900 °C. The Ti/Re/Au ohmic contact showed good edge acuity after annealing at 900 °C for 1 min. Based on the Auger electron microscopy and transmission electron microscopy results, possible ohmic formation mechanisms for the Ti/Re/Au contacts to the n-type GaN are described and discussed. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Item Type:	Article
Subjects:	D Physical Science > Electronic
Divisions:	Department of > Electronics
Depositing User:	C Swapna Library Assistant
Date Deposited:	07 Sep 2019 09:34
Last Modified:	07 Sep 2019 09:34
URI:	http://eprints.uni-mysore.ac.in/id/eprint/7764

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