Pushpa, N. and Gnana Prakash, A. P. and Praveen, K. C. and Cressler, John D. and Revannasiddaiah, D. (2009) An investigation of electron and oxygen ion damage in Si npn RF power transistors. Radiation effects and defects in solids, 164 (10). pp. 592-603. ISSN 1042-0150
Full text not available from this repository. (Request a copy)Abstract
The effects of 8MeV electrons and 60 and 95MeV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence. The dc current gain (hFE), displacement damage factor, excess base current ( IB=IBpost-IBpre), excess collector current ( IC=ICpost-ICpre), collector saturation current (ICS) and deep level transient spectroscopy trap signatures of the irradiated transistors were systematically evaluated.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | transistor; radiation effects; ion irradiation; gain degradation |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Users 19 not found. |
| Date Deposited: | 31 Aug 2019 05:47 |
| Last Modified: | 31 Aug 2019 05:47 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/7428 |
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