Reddy, Rajagopal V. and Kim, Sang-Ho and Hong, Hyun-Gi and Yoon, Sang-Won and Ahn, Jae-Pyoung and Seong, Tae-Yeon (2009) Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN. Journal of materials science-materials in electronics, 20 (1). pp. 9-13. ISSN 1573-482X
Full text not available from this repository. (Request a copy)Abstract
We report on the formation of thermally stable and low-resistance Ti/Au-based ohmic contacts to n-type GaN (4.0 x 10(18) cm(-3)) by using a W barrier layer. It is shown that the electrical characteristic of the sample is considerably improved upon annealing at 900 A degrees C for 1 min in a N-2 ambient. The contacts produce the specific contact resistance as low as 6.7 x 10(-6) Omega cm(2) after annealing. The Norde and current-voltage methods are used to determine the effective Schottky barrier heights (SBHs). It is shown that annealing results in a reduction in the SBHs as compared to that of the as-deposited sample. Auger electron spectroscopy (AES), scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) examinations show that nitride and gallide phases are formed at the contact/GaN interface. Based on the AES, STEM and XRD results, a possible ohmic formation mechanism is described and discussed.
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Electronic |
| Divisions: | PG Centre Hassan > Electronics |
| Depositing User: | Users 19 not found. |
| Date Deposited: | 30 Aug 2019 05:19 |
| Last Modified: | 14 Jul 2022 09:45 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/7348 |
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